Datasheet4U Logo Datasheet4U.com

MRF8S18260HSR6 Datasheet Rf Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MRF8S18260H Rev. 1, 2/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • 1BT6yap0ni0dcwamlidASt,ihnPg=oleu3t--.=8C4a7rM4riHWerzaW,ttIsn--pCAuDvtgMS.,iAgIQnPaeMlrPfaoAgrRnmita=und7ce.e5C: dVliBpDpD@in=g03,.00C1hV%aonltPnsre,olIDbaQb=ility on CCDF. Frequency Gps (dB) ηD Output PAR ACPR (%) (dB) (dBc) 1805 MHz 17.9 31.6 6.0 --35.0 1840 MHz 17.9 31.9 6.0 --36.0 1880 MHz 17.9 32.5 5.9 --36.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8S18260HR6 RF Power Field Effect Transistors
MRF8S18210WGHSR3 RF Power Field Effect Transistors
MRF8S18210WHSR3 RF Power Field Effect Transistors
MRF8S18120HR3 RF Power Field Effect Transistors
MRF8S18120HSR3 RF Power Field Effect Transistors
MRF8S19140HR3 RF Power Field Effect Transistors
MRF8S19140HSR3 RF Power Field Effect Transistors
MRF8S21200HR6 RF Power Field Effect Transistors
MRF8S21200HSR6 RF Power Field Effect Transistors
MRF8S7170NR3 RF Power Field Effect Transistor

MRF8S18260HSR6 Distributor