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Freescale Semiconductor Electronic Components Datasheet

MRF8S18210WHSR3 Datasheet

RF Power Field Effect Transistors

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MRF8S18210WHSR3 pdf
Freescale Semiconductor
Technical Data
Document Number: MRF8S18210WHS
Rev. 0, 4/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from1805 MHz
to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
1BT3yap0ni0dcwamlidASt,ihnPg=oleu3t--.=8C4a5rM0riHWerzaW,ttIsn--pCAuDvtgMS.,iAgIQnPaeMlrPfaoAgrRnmita=und9ce.e9C: dVliBpDpD@in=g03,.00C1hV%aonltPnsre,olIDbaQb=ility
on CCDF.
Frequency
1930 MHz
1960 MHz
1995 MHz
Gps
(dB)
17.8
17.8
18.1
ηD Output PAR ACPR
(%)
(dB)
(dBc)
29.2 7.0 --34.2
28.2 7.0 --34.4
27.6 7.1 --34.3
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point 210 Watts CW
1800 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 30 Volts, IDQ =
1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Frequency
1805 MHz
1840 MHz
1880 MHz
Gps
(dB)
18.2
18.1
18.2
ηD Output PAR ACPR
(%)
(dB)
(dBc)
30.1 7.3 --35.1
29.1 7.4 --35.4
27.8 7.4 --35.9
Features
Designed for Wide Instantaneous Bandwidth Applications
Designed for Wideband Applications that Require 40 MHz Signal Bandwidth
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
For R5 Tape and Reel option, see p. 17.
MRF8S18210WHSR3
MRF8S18210WGHSR3
1805 MHz -- 1995 MHz
50 W AVG., 30 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
NI--880XS--2
MRF8S18210WHSR3
NI--880XS--2 GULL
MRF8S18210WGHSR3
RFin/VGS 2
1 RFout/VDS
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (2,3)
CW Operation @ TC = 25°C
Derate above 25°C
Rating
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
125
225
239
1.44
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S18210WHSR3 MRF8S18210WGHSR3
1


Freescale Semiconductor Electronic Components Datasheet

MRF8S18210WHSR3 Datasheet

RF Power Field Effect Transistors

No Preview Available !

MRF8S18210WHSR3 pdf
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 50 W CW, 30 Vdc, IDQ = 1300 mA, 1840 MHz
Case Temperature 101°C, 210 W CW(3), 30 Vdc, IDQ = 1300 mA, 1840 MHz
RθJC
0.48
0.44
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
5 μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 306 μAdc)
VGS(th)
1.2
1.9
2.7 Vdc
Gate Quiescent Voltage
VGS(Q)
2.0
2.7
3.5 Vdc
(VDD = 30 Vdc, ID = 1300 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.06 Adc)
VDS(on)
0.1
0.24
0.3 Vdc
Functional Tests (4,5) (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1300 mA, Pout = 50 W Avg., f = 1930 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps 17.0 17.8 20.0 dB
Drain Efficiency
ηD 26.0
29.2
—%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR 6.7
7.0
— dB
Adjacent Channel Power Ratio
ACPR
--34.2
--30.0
dBc
Input Return Loss
IRL — --9 --7 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 1300 mA, Pout = 50 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD Output PAR ACPR
(%)
(dB)
(dBc)
IRL
(dB)
1930 MHz
17.8 29.2
7.0
--34.2
--9
1960 MHz
17.8 28.2
7.0
--34.4
--9
1995 MHz
18.1 27.6
7.1
--34.3
--13
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Part internally matched both on input and output.
5. Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MRF8S18210WHSR3 MRF8S18210WGHSR3
2
RF Device Data
Freescale Semiconductor, Inc.


Part Number MRF8S18210WHSR3
Description RF Power Field Effect Transistors
Maker Freescale Semiconductor
Total Page 18 Pages
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