• Part: MRF8S7170NR3
  • Description: RF Power Field Effect Transistor
  • Manufacturer: Freescale Semiconductor
  • Size: 365.37 KB
Download MRF8S7170NR3 Datasheet PDF
MRF8S7170NR3 page 2
Page 2
MRF8S7170NR3 page 3
Page 3

MRF8S7170NR3 Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and mon Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • 225°C Capable Plastic Package
  • RoHS pliant
  • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings
  • AN1955