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MRF8S7170NR3 Datasheet RF Power Field Effect Transistor

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

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Overview

Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev.

0, 2/2010 www.DataSheet4U.com RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications with frequencies from 728 to 768 MHz.

Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and R.

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