MRF8S7235NR3
MRF8S7235NR3 is RF Power Field Effect Transistor manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
Document Number: MRF8S7235N Rev. 0, 6/2012
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
- Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency (MHz) 728 748 768 Gps (dB) 20.0 20.2 20.1 ηD (%) 36.1 36.0 35.9 Output PAR (dB) 6.3 6.4 6.4 ACPR (dBc) --38.1 --39.0 --38.7
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