MRF8S7170NR3
MRF8S7170NR3 is RF Power Field Effect Transistor manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
Document Number: MRF8S7170N Rev. 0, 2/2010
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RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
- Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 19.7 19.5 19.4 hD (%) 37.1 37.0 37.9 Output PAR (dB) 6.2 6.1 6.1 ACPR (dBc) -38.7 -37.5...
