MRF8S7170NR3 Description
Freescale Semiconductor Technical Data Document Number: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S7170NR3 Key Features
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large-Signal Impedance Parameters and mon Source S-Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- 225°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings
- AN1955