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MRF8S7170NR3 - RF Power Field Effect Transistor

General Description

Ferrite Bead, Short 2.7 pF Chip Capacitor 2.2 pF Chip Capacitor 9.1 pF Chip Capacitors 47 μF, 63 V Electrolytic Capacitor 6.8 μF, 100 V Chip Capacitor 100 pF Chip Capacitor 11 pF Chip Capacitors 6.8 pF Chip Capacitors 7.5 pF Chip Capacitors 5.1 pF Chip Capacitor 39 pF Chip Capacitors 10 μF, 25 V Chi

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and R.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF8S7170N Rev. 0, 2/2010 www.DataSheet4U.com RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 19.7 19.5 19.4 hD (%) 37.1 37.0 37.9 Output PAR (dB) 6.2 6.1 6.1 ACPR (dBc) -38.7 -37.5 -37.8 MRF8S7170NR3 728-768 MHz, 50 W AVG.