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MRF8S7235NR3 - RF Power Field Effect Transistor

General Description

Part Number MPZ2012S300A C5750KF1H226ZT C3225JB1H335MT ATC100B680JT500XT ATC100B120JT500XT ATC100B100CT500XT ATC100B2R7CT500XT ATC100B111JT500XT ATC100B3R6CT500XT ATC100B150JT500XT ATC100B6R2CT500XT ATC100B8R2CT500XT ATC100B3R3CT500XT ATC100B1R0BT500XT ATC100B390JT500XT MCGPR63V477M13X26-RH CRCW1206

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev. 0, 6/2012 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency (MHz) 728 748 768 Gps (dB) 20.0 20.2 20.1 ηD (%) 36.1 36.0 35.9 Output PAR (dB) 6.3 6.4 6.4 ACPR (dBc) --38.1 --39.0 --38.7 MRF8S7235NR3 728-768 MHz, 63 W AVG.