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MRF9045LR1 - RF Power FET

Features

  • Integrated ESD Protection.
  • Designed for Maximum Gain and Insertion Phase Flatness.
  • Excellent Thermal Stability.
  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Document Number: MRF9045 Rev. 11, 9/2008 MRF9045LR1 MRF9045LSR1 945 MHz, 45 W, 28 V.

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Full PDF Text Transcription

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LIFETIME BUY LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 28 volt base station equipment. • Typical Two--Tone Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 18.
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