MRFE6S9125NBR1 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data Document Number: MRFE6S9125N Rev. 0, 10/2007 RF Power Field Effect Transistors - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, mon-source amplifier applications in 28 volt base station equipment. N - CDMA Application - Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%...