MRFE6S9125NR1 Datasheet | Freescale Semiconductor

Features - Characterized with Series Equivalent Large - Signal Impedance Parameters - Internally Matched for Ease of Use - Integrated ESD Protection - 225°C Capable Plastic Package - Ro HS pliant - In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Maximum Operation Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) MRFE6S9125NR1 MRFE6S9125NBR1 880 MHz, 27 W AVG., 28 V SINGLE N - CDMA, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S9125NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S9125NBR1 Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +66 - 0.5, +12 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 125 W CW Case Temperature 76°C, 27 W CW Symbol RθJC Value (2,3) 0.44 0.45 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://.freescale./rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. MRFE6S9125NR1 MRFE6S9125NBR1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics .. Test Methodology Class 1B (Minimum) A...