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Freescale Semiconductor Electronic Components Datasheet

MRFE6S9125NR1 Datasheet

N-Channel Enhancement-Mode Lateral MOSFETs

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Freescale Semiconductor
Technical Data
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RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these de-
vices make them ideal for large-signal, common-source amplifier applications
in 28 volt base station equipment.
N - CDMA Application
ITCDyoQpdi=ecas9l85S0TinmhgrAloe,u-PgChoau1rtr3=ie)r2CN7h-WaCnaDntteMsl AABvaPgne.d,rwfIoSirdm-t9ha5n=Cc1eD.2@M2A888(8PM0ilHMotzH,.SzP,yAnVRcD,D=P=9a.g28i8ndgVB,oT@ltrsa,ffic
0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = - 45.7 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
GSM EDGE Application
TPyopuPtico=awl6eG0rSWGMaaitEntsD—AGv2Eg0.P, dFeBurflol rFmreaqnuceen: cVyDDBa=n2d8(8V6o5lt-s9, 6ID0QM=H7z0o0r
mA,
920
-
960
MHz)
Drain Efficiency — 40%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.8% rms
GSM Application
1T2yp5icWaal GttsS, MFuPlleFrfroerqmuaennccey:BVaDnDd=(92280V- 9o6lt0s,MIDHQz=) 700 mA, Pout =
Power Gain — 19 dB
Drain Efficiency — 62%
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRFE6S9125N
Rev. 0, 10/2007
MRFE6S9125NR1
MRFE6S9125NBR1
880 MHz, 27 W AVG., 28 V
SINGLE N - CDMA, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S9125NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S9125NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
Gate - Source Voltage
Maximum Operation Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
VDSS
VGS
VDD
Tstg
TC
TJ
- 0.5, +66
- 0.5, +12
32, +0
- 65 to +150
150
225
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 76°C, 27 W CW
RθJC
0.44
0.45
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9125NR1 MRFE6S9125NBR1
1


Freescale Semiconductor Electronic Components Datasheet

MRFE6S9125NR1 Datasheet

N-Channel Enhancement-Mode Lateral MOSFETs

No Preview Available !

Table 3. ESD Protection Characteristics
www.DataSheet4U.com
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.74 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
IDSS
IDSS
IGSS
VGS(th)
VGS(Q)
VDS(on)
1
2
0.05
2.1
2.86
0.24
Crss — 1.9
Coss
64
Ciss — 350
10 μAdc
1 μAdc
10 μAdc
3 Vdc
4 Vdc
0.3 Vdc
— pF
— pF
— pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N - CDMA, f = 880 MHz,
Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 19 20.2 24 dB
Drain Efficiency
ηD 29 31 — %
Adjacent Channel Power Ratio
ACPR
- 45.7
- 44
dBc
Input Return Loss
IRL — - 18 - 9 dB
1. Part is internally input matched.
(continued)
MRFE6S9125NR1 MRFE6S9125NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MRFE6S9125NR1
Description N-Channel Enhancement-Mode Lateral MOSFETs
Maker Freescale Semiconductor
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