MRFE6VP100HR5 Description
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Freescale’s enhanced ruggedness platform and are suitable for use in applications where high VSWRs are...
MRFE6VP100HR5 Key Features
- Wide Operating Frequency Range
- Extremely Rugged
- Unmatched, Capable of Very Broadband Operation
- Integrated Stability Enhancements
- Low Thermal Resistance
- Integrated ESD Protection Circuitry
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel
- 0.5, +133
- 6.0, +10
- 65 to +150