MRFE6VP5600HSR6 Datasheet PDF - Freescale Semiconductor RF Power Field Effect Transistors Specs

MRFE6VP5600HSR6 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRFE6VP5600HSR6, a member of the MRFE6VP5600HR6 RF Power Field Effect Transistors family.

Datasheet Summary

Description

12 pF Chip Capacitor 27 pF Chip Capacitors 0.8--8.0 pF Variable Capacitor, Gigatrim 33 pF Chip Capacitor 22 μF, 35 V Tantalum Capacitors 0.1 μF Chip Capacitors 220 nF Chip Capacitors 1000 pF Chip Capacitors 36 pF Chip Capacitor 51 pF Chip Capacitor 240 pF Chip Capacitors 39 pF Chip Capacitor 10 pF C

Features

Unmatched Input and Output Allowing Wide Frequency Range Utilization.
Device can be used Single--Ended or in a Push--Pull Configuration.
Qualified Up to a Maximum of 50 VDD Operation.
Characterized from 30 V to 50 V for Extended Power Range.
Suitable for Linear.

Datasheet Details

Part number	MRFE6VP5600HSR6
Manufacturer	Freescale Semiconductor
File Size	0.98 MB
Description	RF Power Field Effect Transistors
Datasheet	MRFE6VP5600HSR6 Datasheet
Additional preview pages of the MRFE6VP5600HSR6 datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. • Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 600 Peak 600 Avg. f (MHz) 230 230 Gps (dB) 25.0 24.6 ηD (%) 74.6 75.2 IRL (dB) --18 --17 MRFE6VP5600HR6 MRFE6VP5600HSR6 1.

Published: Dec 11, 2011 |