* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Device can be used Single
* Ended or in a Push
* Pull Configuration
* Qualified Up to a Maximum of 50 VDD Operation
* Characterized from 30 V to 50 V for Extended Power Range
MRFE6VP5600HSR6 Datasheet (0.98 MB)
MRFE6VP5600HSR6
Freescale Semiconductor
0.98 MB
Rf power field effect transistors.
www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 1, 1/2011 RF Power Field Effect Transistors High Rugg.
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