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MRFE6VP5600HSR6 - RF Power Field Effect Transistors

Download the MRFE6VP5600HSR6 datasheet PDF. This datasheet also covers the MRFE6VP5600HR6 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

12 pF Chip Capacitor 27 pF Chip Capacitors 0.8--8.0 pF Variable Capacitor, Gigatrim 33 pF Chip Capacitor 22 μF, 35 V Tantalum Capacitors 0.1 μF Chip Capacitors 220 nF Chip Capacitors 1000 pF Chip Capacitors 36 pF Chip Capacitor 51 pF Chip Capacitor 240 pF Chip Capacitors 39 pF Chip Capacitor 10 pF C

Key Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Device can be used Single--Ended or in a Push--Pull Configuration.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Characterized from 30 V to 50 V for Extended Power Range.
  • Suitable for Linear.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRFE6VP5600HR6_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRFE6VP61K25GN RF Power LDMOS Transistors NXP
MRFE6VP61K25GSR5 RF Power LDMOS Transistors NXP
MRFE6VP61K25HR5 RF Power LDMOS Transistors NXP
MRFE6VP61K25HSR5 RF Power LDMOS Transistors NXP
MRFE6VP61K25N RF Power LDMOS Transistors NXP

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRFE6VP5600HR6 RF Power Field Effect Transistors
MRFE6VP100HR5 RF Power LDMOS Transistors
MRFE6VP100HSR5 RF Power LDMOS Transistors
MRFE6VP61K25HR6 RF Power LDMOS Transistors
MRFE6VP6300HR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. • Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 600 Peak 600 Avg. f (MHz) 230 230 Gps (dB) 25.0 24.6 ηD (%) 74.6 75.2 IRL (dB) --18 --17 MRFE6VP5600HR6 MRFE6VP5600HSR6 1.