MRFE6VP61K25HR6 - RF Power LDMOS Transistors

Features

Unmatched Input and Output Allowing Wide Frequency Range Utilization.
Device can be used Single--Ended or in a Push--Pull Configuration.
Qualified Up to a Maximum of 50 VDD Operation.
Characterized from 30 V to 50 V for Extended Power Range.
Suitable for Linear.

Freescale Semiconductor (now NXP Semiconductors)

MRFE6VP61K25HR6 RF Power LDMOS Transistors by Freescale Semiconductor - Datasheet Preview — Datasheet preview – MRFE6VP61K25HR6

Datasheet Details

Part number	MRFE6VP61K25HR6
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	967.15 KB
Description	RF Power LDMOS Transistors
Datasheet	MRFE6VP61K25HR6 Datasheet
Additional preview pages of the MRFE6VP61K25HR6 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.  Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pout (W) f (MHz) Gps (dB) D (%) Pulse (100 sec, 20% Duty Cycle) CW 1250 Peak 1250 CW 230 230 24.0 74.0 22.9 74.6 Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 1.

Published: Dec 11, 2011 |