MRFE6VP6300HR3 Datasheet PDF (RF Power Field Effect Transistors) | Download Freescale Semiconductor MRFE6VP6300HR3

MRFE6VP6300HR3 - RF Power Field Effect Transistors

Description

15 pF Chip Capacitors 82 pF Chip Capacitor 91 pF Chip Capacitors 1000 pF Chip Capacitors 10K pF Chip Capacitors 0.1 μF, 50 V Chip Capacitor 2.2 μF, 100 V Chip Capacitor 10 μF, 35 V Tantalum Capacitor 2.2 μF, 100 V Chip Capacitor 0.1 μF, 100 V Chip Capacitor 0.01 μF, 100 V Chip Capacitor 220 μF, 100

Features

Unmatched Input and Output Allowing Wide Frequency Range Utilization.
Device can be used Single--Ended or in a Push--Pull Configuration.
Qualified Up to a Maximum of 50 VDD Operation.
Characterized from 30 V to 50 V for Extended Power Range.
Suitable for Linear.

Datasheet Details

Part number	MRFE6VP6300HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	1.04 MB
Description	RF Power Field Effect Transistors
Datasheet	MRFE6VP6300HR3 Datasheet
Additional preview pages of the MRFE6VP6300HR3 datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. • Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 300 Peak 300 Avg. f (MHz) 230 130 Gps (dB) 26.5 25.0 ηD (%) 74.0 80.0 IRL (dB) --16 --15 MRFE6VP6300HR3 MRFE6VP6300HSR3 1.

Published: Dec 11, 2011 |