Datasheet Summary
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Freescale Semiconductor Technical Data
Document Number: MRFG35005MT1 Rev. 2, 5/2005
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.
- Typical W
- CDMA Performance:
- 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power
- 450 mWatt Power Gain
- 11 dB Efficiency
- 25%
- 4.5 Watts P1dB @ 3.55 GHz
- Excellent Phase Linearity and Group Delay Characteristics
- High Gain, High Efficiency and High Linearity
- N...