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MRFG35005MT1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor

Description

7.5 pF Chip Capacitors 0.4 pF Chip Capacitor (0805) 3.9 pF Chip Capacitors (0805) 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 3.9 µF Chip Capacitors 0.1 µF Chip Capacitors 22 µF, 35 V Tantalum Surface Mount Capacitors 0.1 pF Chip Capacitors (0805) 0.3

Features

  • 99 96.91 95.41 94.29 92.80 91.10 89.66 87.90 86.08 84.39 82.48 80.32 |S21| 1.522 1.507 1.493 1.478 1.465 1.453 1.436 1.421 1.409 1.3.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 450 mWatt Power Gain — 11 dB Efficiency — 25% • 4.5 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • N Suffix Indicates Lead - Free Terminations • In Tape and Reel.
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