MRFG35002N6T1 Datasheet | Freescale Semiconductor

.. Freescale Semiconductor Technical Data Document Number: MRFG35002N6 Rev. 1, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. - Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 m A, Pout = 158.5 m Watts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 d B @ 0.01% Probability on CCDF. Power Gain - 10 d B Drain Efficiency - 27% ACPR @ 5 MHz Offset - - 41 d Bc in 3.84 MHz Channel Bandwidth - 1.5 Watts P1d B @ 3550 MHz, CW - Excellent Phase Linearity and Group Delay Characteristics - High Gain, High Efficiency and High Linearity - Ro HS pliant. - In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 3.5 GHz, 1.5 W, 6 V POWER FET Ga As PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS VGS Pin Tstg Tch TC Value 8 -5 22 - 65 to +150 175 - 20 to +85 Unit Vdc Vdc d Bm °C °C °C Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (2) 15.2 Unit °C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005. All rights...