MRFG35002N6T1 Description
Freescale Semiconductor Technical Data Document Number: 1, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz.
- Part: MRFG35002N6T1
- Manufacturer: Freescale Semiconductor
- Size: 235.67 KB
Related Freescale Semiconductor Datasheets
| Part Number | Description |
|---|---|
| MRFG35002N6AT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35003MT1 | RF Power Field Effect Transistors |
| MRFG35003N6T1 | RF Power Field Effect Transistor |
| MRFG35003NT1 | RF Power Field Effect Transistors |
| MRFG35005MT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |