MRFG35002N6T1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor

Product Overview

Freescale Semiconductor

Datasheet Details

Part number	MRFG35002N6T1
Manufacturer	Freescale Semiconductor
File Size	235.67 KB
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Datasheet	MRFG35002N6T1 Datasheet
Additional preview pages of the MRFG35002N6T1 datasheet.

Product details

Description

13 pF Chip Capacitors Part Number 100A130JP150X Manufacturer ATC MRFG35002N6T1 RF Device Data Freescale Semiconductor 3 C13 C12 C11 C10 C9 C8 C7 C18 C17 C16 C15 C14 R1 C5 C6 C19 C20 C22 C21 C2 C1 C3 C4 C23 C24 MRFG35002M6, Rev.2 3.5 GHz - 3.6 GHz Figure 2. MRFG35002N6 Test Circuit Component Layout MRFG35002N6T1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 14 GT, TRANSDUCER GAIN (dB) 12 VDS = 6 Vdc, IDQ = 75 mA, f = 3550 MHz Single Carrier W

Features

4.80 4.85 4.90 4.95 5.00 5.05 S11 |S11| 0.890 0.889 0.888 0.887 0.885 0.884 0.883 0.881 0.880 0.879 0.878 0.876 0.876 0.874 0.872 0.871 0.871 0.867 0.867 0.865 0.864 0.863 0.861 0.859 0.859 0.858 0.855 0.854 0.85.

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Published: Feb 25, 2007 |