MRFG35005MT1 is Gallium Arsenide PHEMT RF Power Field Effect Transistor manufactured by Freescale Semiconductor.
| Part Number | Description |
|---|---|
| MRFG35005NT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35002N6AT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35002N6T1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35003MT1 | RF Power Field Effect Transistors |
| MRFG35003N6T1 | RF Power Field Effect Transistor |
Freescale Semiconductor Technical Data Document Number: 2, 5/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.
