| Part number | MRFG35005MT1 |
|---|---|
| Datasheet | MRFG35005MT1_FreescaleSemiconductor.pdf |
| File Size | 149.75 KB |
| Manufacturer | Freescale Semiconductor (now NXP Semiconductors) |
| Description | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
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Freescale Semiconductor Technical Data Document Number: 2, 5/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.
See all Freescale Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRFG35005NT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35002N6AT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35002N6T1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35003MT1 | RF Power Field Effect Transistors |
| MRFG35003N6T1 | RF Power Field Effect Transistor |
| MRFG35003NT1 | RF Power Field Effect Transistors |
| MRFG35010 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35010ANT1 | RF Power Field Effect Transistor |
| MRFG35010AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35020AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
