MRFG35002N6AT1 Description
Freescale Semiconductor Technical Data Document Number: Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz.
MRFG35002N6AT1 Key Features
- Excellent Phase Linearity and Group Delay Characteristics
- High Gain, High Efficiency and High Linearity
- RoHS pliant
- In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel
- 03, STYLE 1 PLD
- 1.5 PLASTIC
- Source Voltage Gate
- Source Voltage RF Input Power Storage Temperature Range Channel Temperature
- 65 to +150 175
- AN1955