MRFG35002N6AT1 Datasheet | Freescale Semiconductor

Features - Excellent Phase Linearity and Group Delay Characteristics - High Gain, High Efficiency and High Linearity - Ro HS pliant - In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 3.5 GHz, 1.5 W, 6 V POWER FET Ga As PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS VGS Pin Tstg Tch Value 8 -5 22 - 65 to +150 175 Unit Vdc Vdc d Bm °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (2) 13.7 Unit °C/W 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007, 2008. All rights reserved. MRFG35002N6AT1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum) .. Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 6 Vdc, VGS = - 2.5 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc)...