Freescale Semiconductor Electronic Components Datasheet

MW6IC2240NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

The MW6IC2240N wideband integrated circuit is designed with on -chip

matching that makes it usable from 2110 to 2170 MHz. This multi - stage

structure is rated for 26 to 32 Volt operation and covers all typical cellular base

station modulation formats.

Final Application

•

Typical 2 -Carrier W

210 mA, IDQ2 = 370

-mCAD,MPAouPt =er4fo.5rmWaantctes:AVvDgD.,

=Fu2l8l FVroelqtsu,eInDcQy1

Band

(2110 -2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB

@ 0.01% Probability on CCDF.

Power Gain — 28 dB

Power Added Efficiency — 15%

IM3 @ 10 MHz Offset — -43 dBc in 3.84 MHz Bandwidth

ACPR @ 5 MHz Offset — -46 dBc in 3.84 MHz Bandwidth

Driver Application

• 3T201yp07i0cmaMAl H2, Iz-DC)Q,aC2rrh=iea3rn2Wn0e-lmCBADa,nMPdAowuPitd=ethr2fo=5rm3d.Ba8mn4c,MeF:HuVzllD,FDPrAe=Rq2u8=enV8co.5yltsdB,BaIDn@dQ1(02=.10110%-

Probability on CCDF.

Power Gain — 29 dB

IM3 @ 10 MHz Offset — -59 dBc in 3.84 MHz Bandwidth

ACPR @ 5 MHz Offset — -62 dBc in 3.84 MHz Bandwidth

• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW

Output Power

• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW

Pout.

• Characterized with Series Equivalent Large -Signal Impedance Parameters

and Common Source Scattering Parameters

• On -Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)

• Integrated Quiescent Current Temperature Compensation

with Enable/Disable Function

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead -Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel

Document Number: MW6IC2240N

Rev. 1, 1/2006

MW6IC2240NBR1

MW6IC2240GNBR1

2110 -2170 MHz, 4.5 W AVG., 28 V

2 x W -CDMA

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

CASE 1329-09

TO-272 WB-16

PLASTIC

MW6IC2240NBR1

CASE 1329A-03

TO-272 WB-16 GULL

PLASTIC

MW6IC2240GNBR1

VDS1

GND 1

VDS1

NC 4

16 GND

15 NC

NC 5

RFin

RFout/VDS2

RFin 6

14 RFout /

VDS2

NC 7

VGS1 Quiescent Current

VGS2 Temperature Compensation

VDS1

VGS1

VGS2

VDS1

GND

13 NC

12 GND

(Top View)

Figure 1. Functional Block Diagram

Note: Exposed backside flag is source

terminal for transistors.

Figure 2. Pin Connections

RF Device Data

Freescale Semiconductor

MW6IC2240NBR1 MW6IC2240GNBR1

Freescale Semiconductor Electronic Components Datasheet

MW6IC2240NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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Table 1. Maximum Ratings

Rating

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Operating Junction Temperature

Input Power

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Symbol

VDSS

VGS

Tstg

Symbol

RθJC

Value

-0.5, +68

-0.5, +6

-65 to +200

200

Value (1,2)

Unit

Vdc

°C

dBm

Unit

°C/W

W-CDMA Application

(Pout = 4.5 W Avg.)

Stage 1, 28 Vdc, IDQ = 210 mA

Stage 2, 28 Vdc, IDQ = 370 mA

1.8

1.0

W-CDMA Application

(Pout = 40 W CW)

Stage 1, 28 Vdc, IDQ = 110 mA

Stage 2, 28 Vdc, IDQ = 370 mA

Table 3. ESD Protection Characteristics

2.0

0.87

Test Methodology

Human Body Model (per JESD22-A114)

Class

1A (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak

Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3 260 °C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max Unit

Functional Tests (In Freescale Wideband 2110-2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout

= 4.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2-Carrier W-CDMA, 3.84 MHz Channel

Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @

±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

Gps 25.5 28 30 dB

Power Added Efficiency

PAE 13.7

—

Intermodulation Distortion

IM3 — -43 -40 dBc

Adjacent Channel Power Ratio

ACPR

—

-46 -43 dBc

Input Return Loss

IRL — -15 -10 dB

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

(continued)

MW6IC2240NBR1 MW6IC2240GNBR1

RF Device Data

Freescale Semiconductor

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MW6IC2240NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

MW6IC2240NBR1 Datasheet

RF LDMOS Wideband Integrated Power Amplifiers

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