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MW6IC2420NBR1 - RF LDMOS Integrated Power Amplifier

General Description

2.2 μF Chip Capacitors 100 nF Chip Capacitors 0.5 pF Chip Capacitors 6.8 pF Chip Capacitor 2.2 pF Chip Capacitor 1 pF Chip Capacitor 5.6 pF Chip Capacitors 0.3 pF Chip Capacitor 0.5 pF Chip Capacitor 5 kΩ Potentiometer CMS Cermet Multi - turn Part Number C32225X5R1H225MT C1206C104K1KAC 08051J0R5BS 0

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MW6IC2420NBR1 2450 MHz, 20 W, 28 V CW.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2420N Rev. 0, 3/2007 RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on - chip matching that makes it usable at 2450 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical modulation formats. Driver Applications • Typical CW Performance at 2450 MHz: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 20 Watts Power Gain — 19.5 dB Power Added Efficiency — 27% • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 W CW Pout.