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MW6IC2420NBR1 - RF LDMOS Integrated Power Amplifier

Description

2.2 μF Chip Capacitors 100 nF Chip Capacitors 0.5 pF Chip Capacitors 6.8 pF Chip Capacitor 2.2 pF Chip Capacitor 1 pF Chip Capacitor 5.6 pF Chip Capacitors 0.3 pF Chip Capacitor 0.5 pF Chip Capacitor 5 kΩ Potentiometer CMS Cermet Multi - turn Part Number C32225X5R1H225MT C1206C104K1KAC 08051J0R5BS 0

Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MW6IC2420NBR1 2450 MHz, 20 W, 28 V CW.

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Datasheet preview – MW6IC2420NBR1

Datasheet Details

Part number MW6IC2420NBR1
Manufacturer Freescale Semiconductor
File Size 523.11 KB
Description RF LDMOS Integrated Power Amplifier
Datasheet download datasheet MW6IC2420NBR1 Datasheet
Additional preview pages of the MW6IC2420NBR1 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2420N Rev. 0, 3/2007 RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on - chip matching that makes it usable at 2450 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical modulation formats. Driver Applications • Typical CW Performance at 2450 MHz: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 20 Watts Power Gain — 19.5 dB Power Added Efficiency — 27% • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 W CW Pout.
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