MW7IC18100NBR1 Overview
Freescale Semiconductor Technical Data Document Number: 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulations including GSM EDGE and CDMA.
MW7IC18100NBR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters and mon Source Scattering Parameters
- Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature pensation with Enable/Disable Function (1)
- Integrated ESD Protection
- 200°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
- 270 WB
- 14 PLASTIC MW7IC18100NR1 CASE 1621