MWE6IC9080NBR1 Datasheet (RF LDMOS Wideband Integrated Power Amplifiers)

Part: MWE6IC9080NBR1
Manufacturer: Freescale Semiconductor
Size: 763.25 KB

MWE6IC9080NBR1 Key Features

Characterized with Series Equivalent Large--Signal Impedance Parameters and mon Source Scattering Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature pensation with Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS pliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel

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MWE6IC9080NBR1 Description

Freescale Semiconductor Technical Data Document Number: 0, 4/2010 RF LDMOS Wideband Integrated Power Amplifiers The MWE6IC9080N wideband integrated circuit is designed with on--chip matching that makes it usable from 865 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulations.