11N60E Datasheet - Fuji Electric

FMV11N60E

11N60E Features

* Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Outline Drawings [mm] TO-220F(SLS) Applications

11N60E General Description

Symbol VDS Drain-Source Voltage VDSX Characteristics 600 600 Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode .

11N60E Datasheet (386.41 KB)

11N60E Datasheet Preview — Preview of 11N60E PDF

Datasheet Details

Part number:

11N60E

Manufacturer:

Fuji Electric

File Size:

386.41 KB

Description:

Fmv11n60e.

📁 Related Datasheet

11N60 N-Channel MOSFET (Fairchild Semiconductor)

11N60C2 Power Transistor (Infineon)

11N60C3 Power Transistor (Infineon Technologies)

11N60K-MT N-CHANNEL POWER MOSFET (Unisonic Technologies)

11N60M6 N-channel Power MOSFET (STMicroelectronics)

11N60S5 SPP11N60S5 (Infineon Technologies AG)

11N65BS N-Channel MOSFET (PINGWEI)

11N65C3 SPP11N65C3 (Infineon Technologies)

11N65FJHD2 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Microelectronics)

11N65FS N-Channel MOSFET (PINGWEI)

TAGS

11N60E FMV11N60E Fuji Electric

Image Gallery

11N60E Features

11N60E General Description

Datasheet Details

File Size:

Description:

11N60E Distributor