MB84VD23481FJ-70 Description
FUJITSU SEMICONDUCTOR DATA SHEET DS05-50310-2E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAMTM MB84VD23481FJ-70.
MB84VD23481FJ-70 Key Features
- Power Supply Voltage of 2.7 V to 3.1 V
- High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (FCRAM)
- Operating Temperature -30 °C to +85 °C
- Package 65-ball FBGA
- Both VCCf and VCCr must be the same level when either part is being accessed
- FLASH MEMORY
- 0.17 µm Process Technology
- Simultaneous Read/Write Operations (Dual Bank)
- Single 3.0 V Read, Program, and Erase Minimized system level power requirements
- Minimum 100,000 Program/Erase Cycles