MBM29DS163BE - (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT

Fujitsu Media Devices

Datasheet Details

Part number	MBM29DS163BE
Manufacturer	Fujitsu Media Devices
File Size	740.54 KB
Description	(MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT
Datasheet	MBM29DS163BE_FujitsuMediaDevices.pdf

The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each.

a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The device is erased when shipped from the factory. The device features single 1.8 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Pollin.

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Other Datasheets by Fujitsu Media Devices

MBM29DS163TE - (MBM29DS163BE/TE) FLASH MEMORY CMOS 16 M (2 M X 8/1 M X 16) BIT
MBM29DL161BD - (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
MBM29DL161BE - (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
MBM29DL161TD - (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
MBM29DL161TE - (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
MBM29DL162BD - (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT

Published: Jul 30, 2007 |