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GE

IGT6D11 Datasheet Preview

IGT6D11 Datasheet

Insulated Gate Bipolar Transistor

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mTMlJ~~~
Insulated Gate Bipolar Transistor
IGT6D11,E11
10 AMPERES
400, 500 VOLTS
EQUIV. ROS(ON) =0.27 il
This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a
new type of MOS-gate turn on/off power switching device
combining the best advantages of power MOSFETS and
bipolar transistors. The result is a device that has the high
input impedance of MOSFETS and the low on-state con-
duction losses similar to bipolar transistors. The device design
and gate characteristics of the IGT'II Transistor are also similar
to power MOSFETS. An important difference is the equivalent
RDS(ON) drain resistance which is modulated to a low value
(10 times lower) when the gate is turned on. The much lower
on-state voltage drop also varies only moderately between
25°C and 150°C offering extended power handling capability.
The IGT'II Transistor is ideal for many high voltage switching
applications operating at low frequencies and where low
conduction losses are essential, such as; AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
Features:
• Low VCE(SAT) - 2.5V typ @ 10A
• Ultra-fast turn-on -100 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling - 10 amps @ 100°C
N-CHANNEL
c
.~
CASE STYLE TO-204AA (TO-3)
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0845(2147J
06~~lXI'--6M5AXl~~~.35819.09) MAX
T~
I-a 043( 1 09) OIA ---'
0038(097)
I
SEATING PLANE
426/10 82, MIN
CASE TEMP
REFERENCE
POINT
20(5001
0.162(4 09/
015(3841
2 HOLES
DIA
0440(11 IBI
o420{1067j
=maximum ratings (TC 25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage, VGE = OV
Collector-Gate Voltage, RGE = 1Mil
Continuous Drain Current@Tc = 100°C
@Tc= 25°C
Pulsed Collector Current(1)
Gate-Emitter Voltage
Total Power DiSSipation @ Tc = 25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
VCES
VCGR
Ic
ICM
VGE
Po
TJ, TSTG
IGT6011
400
400
10
18
40
±25
75
0.6
-55 to 150
thermal characteristics
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
ROJC
TL
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
1.67
260
IGT6E11
500
500
10
18
40
±25
75
0.6
-55 to 150
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
°C
1.67 °C/W
260 °C
349




GE

IGT6D11 Datasheet Preview

IGT6D11 Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

electrical characteristics (Tc = 25° C) (unless otherwise specified)
I I ICHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Collector-Emitter Breakdown Voltage
(VGE = OV, Ic = 2S0J.LA)
IGT6D11
IGT6E11
Collector Cut-off Current
(VCE = Max Rating, VGE = OV, Tc = 2S°C)
(VCE = Max Rating, x O.B, VGE = OV, Tc = 1S0°C)(2)
Gate-Emitter Leakage Current
(VGE = ±20V)
BVCES
ICES
IGES
(2) Applies for 3.3°C per watt maximum thermal resistance, case to ambient.
on characteristics(3)
Gate Threshold Voltage
(VCE = VGE, IC = 2S0J.LA)
Collector-Emitter saturation Voltage
Ic = 10 A, Tc = 2SoC, VGE = 1SV
Ic = 10 A, Tc = 1S0°C, VGE = 1SV
Ic = 10 A, Tc = 2SoC, VGE = 10V
Tc= 2SOC VGE(TH)
TC = 1S0°C
VCE(SAT)
400
SOO
-
-
-
2
-
-
-
-
-
-
-
-
-
4.0
2.S
2.S
2.B
2.9
MAX
UNIT
-
-
2S0
4.0
±SOO
Volts
pA
mA
nA
S Volts
-
2.7 Volts
-
-
dynamic characteristics
Input Capacitance VGE = OV
Output Capacitance VCE = 2SV
Reverse Transfer
Capacitance
f = 1 MHz
Cies
Coes
C res
-
-
-
10S0
340
10
-
-
-
pF
pF
pF
switching characteristics(3) (see figures 8 &9)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-off Delay Time
Fall Time
Equivalent
Fall Time
Turn-off
Switching Losses
Resistive Load, TC= 12So C
IC = 10A, VCE = Rated VCES
VGE = 1SV
RG(on) = son, RGE = 100n
Inductive Load, Tc = 12SoC,
L = SSOJ.LH, Ic = 10A,
VCE(CLAMP) = Rated VCES
VGE = 1SV
RG(on) = SOn,RGE = 100n IGT6D11
IGT6E11
(3) Pulse test: Pulse widths :5 300 ILsec, duty cycle :5 2%.
40r-----,-----~_=~_.~----r-----._----.
td(on)
tr
td(off)
tf
td(off)
tf
tf(eq)
Ef
-
-
-
-
-
-
-
-
100 -
100 -
0.4 -
2.S -
ns
ns
J.LS
J.Ls
O.B 1.2 J.LS
O.B 1.0 J.Ls
0.6 O.B J.LS
1.3 1.6
1.6 2.0 mJ
25r-----~r------.r------,-------,------_,
35r-----~----_r~~T+--,£--~----+_----~
VGE=7V
VGE = BV
COLLECTOR TO EMITTER VOLTAGE. VCE. VOLTS
10
FIGURE 1. TYPICAL OUTPUT
CHARACTERISTICS
°OL--~~~------~------~------~----~
COLLECTOR·EMITTER SATURATION VOLTAGE, VCE(SAT). VOLTS
FIGURE 2. TYPICAL COLLECTOR-EMITTER
SATURATION VOLTAGE
3S0


Part Number IGT6D11
Description Insulated Gate Bipolar Transistor
Maker GE
Total Page 4 Pages
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