* Low VCE(SAT) - 2.3V typ @ 20A " Ultra-fast turn-on - 200 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off e High current handling - 20 amps @ 100°C N-CHANNEL c .~ r: a CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.645(21.471 MAX
IGT6D20
GE
294.88 KB
Insulated gate bipolar transistor.
mTMIT~~~ insulated Gate Bipolar Transistor IGT6D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.12 n This IGT'M Transistor (Insulated Gate Bipol.
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