IGT6D21 Key Features
- Low VCE(SAT)
- 2.5Vtyp@20A
- Ultra-fast turn-on -150 ns typical
- Polysilicon MOS gate
- Voltage controlled turn on/off
- High current handling
- 20 amps @ 900 C
- I- 004311091 DIA
- 55 to 150
- 55 to 150
IGT6D21 is Insulated Gate Bipolar Transistor manufactured by GE.
| Part Number | Description |
|---|---|
| IGT6D20 | Insulated Gate Bipolar Transistor |
| IGT6D10 | Insulated Gate Bipolar Transistor |
| IGT6D11 | Insulated Gate Bipolar Transistor |
| IGT6E10 | Insulated Gate Bipolar Transistor |
| IGT6E11 | Insulated Gate Bipolar Transistor |