IGT6E20 Key Features
- Low VCE(SAT)
- 2.3V typ @ 20A
- 200 ns typical
- Polysilicon MOS gate
- Voltage controlled turn on/off
- 20 amps @ 100°C
- 35B(9.D9l MAX
- 55 to 150
- 55 to 150
- IGT6E20
- Part: IGT6E20
- Manufacturer: GE
- Size: 294.88 KB
Related GE Datasheets
| Part Number | Description |
|---|---|
| IGT6E21 | Insulated Gate Bipolar Transistor |
| IGT6E10 | Insulated Gate Bipolar Transistor |
| IGT6E11 | Insulated Gate Bipolar Transistor |
| IGT6D10 | Insulated Gate Bipolar Transistor |
| IGT6D11 | Insulated Gate Bipolar Transistor |
IGT6E20 Description
mTMIT~~~ insulated Gate Bipolar Transistor IGT6D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. RDS(ON) = 0.12 n This IGT'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device bining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar...