IGT6E21, IGT6D21 Datasheet - GE

IGT6E21 Insulated Gate Bipolar Transistor

mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D21,E21 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.145 0 This IGT'- Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design and gate characteristics ofthe IGT'- Transis.

IGT6E21 Features

* Low VCE(SAT) - 2.5Vtyp@20A

* Ultra-fast turn-on -150 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off

* High current handling - 20 amps @ 900 C N-CHANNEl c o~ E CASE STYLE TO-204AA (TO-3) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0845121.471

IGT6D21-GE.pdf