IGT6E21 Key Features
- Low VCE(SAT)
- 2.5Vtyp@20A
- Ultra-fast turn-on -150 ns typical
- Polysilicon MOS gate
- Voltage controlled turn on/off
- High current handling
- 20 amps @ 900 C
- I- 004311091 DIA
- 55 to 150
- 55 to 150
- Part: IGT6E21
- Manufacturer: GE
- Size: 280.29 KB
Related GE Datasheets
| Part Number | Description |
|---|---|
| IGT6E20 | Insulated Gate Bipolar Transistor |
| IGT6E10 | Insulated Gate Bipolar Transistor |
| IGT6E11 | Insulated Gate Bipolar Transistor |
| IGT6D10 | Insulated Gate Bipolar Transistor |
| IGT6D11 | Insulated Gate Bipolar Transistor |
IGT6E21 Description
mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D21,E21 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.145 0 This IGT'- Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device bining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar...