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IGT8E20 - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IGT8E20, a member of the IGT8D20 Insulated Gate Bipolar Transistor family.

Features

  • Low VCE(SAT) - 2.3V typ @ 20A.
  • Ultra-fast turn-on - 200 ns typical.
  • Polysilicon MOS gate - Voltage controlled turn on/off.
  • High current handling - 20 amps @ 100°C N-.

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Datasheet preview – IGT8E20

Datasheet Details

Part number IGT8E20
Manufacturer GE
File Size 290.75 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet IGT8E20 Datasheet
Additional preview pages of the IGT8E20 datasheet.

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Full PDF Text Transcription

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mTMlJ~~~ Insulated Gate Bipolar Transistor IGT8D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.12 n This IG"f'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design and gate characteristics of the IGT'M Transistor are also similar to power MOSFETS. An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is turned on.
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