* Low VCE(SAT) - 2..5V typ @ 20A
* Ultra-fast turn-on -150 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 20 amps @ 90° C N-CHANNfEl c o~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) r r.6'S ('S.62)Y.'
IGT8E21
GE
285.71 KB
Insulated gate bipolar transistor.
mTM1J~~~ Insulated Gate Bipolar Transistor 20AMPEFlES 400, 500 VOLTS EQUIV. RDS(ON) =0.145 n. This IG"f"I Transistor (Insulated Gate Bipolar Transis.
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