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IRFD210 FIELD EFFECT POWER TRANSISTOR

IRFD210 Description

~~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFD21 0,211 D82BN2,M2 0.6 AMPERES 200, 150 VOLTS RDS(ON) = 1.5 il This series of N-Channel Enhancement-mode .

IRFD210 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

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Datasheet Details

Part number
IRFD210
Manufacturer
GE
File Size
179.77 KB
Datasheet
IRFD210-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR

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FIELD EFFECT POWER TRANSISTOR GE
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