Datasheet Details
| Part number | IRFD210 |
|---|---|
| Manufacturer | Intersil (now Renesas) |
| File Size | 52.32 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | IRFD210_IntersilCorporation.pdf |
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Overview: IRFD210 Data Sheet July 1999 File Number 2316.3 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17442.
| Part number | IRFD210 |
|---|---|
| Manufacturer | Intersil (now Renesas) |
| File Size | 52.32 KB |
| Description | N-Channel Power MOSFET |
| Datasheet | IRFD210_IntersilCorporation.pdf |
|
|
|
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFD210 | Power MOSFET | International Rectifier |
 |
IRFD210 | Power MOSFET | Vishay |
 |
IRFD210 | FIELD EFFECT POWER TRANSISTOR | GE |
|
IRFD210PBF | HEXFET Power MOSFET | International Rectifier |
| Part Number | Description |
|---|---|
| IRFD220 | N-Channel Power MOSFET |
| IRFD110 | N-Channel Power MOSFET |
| IRFD120 | N-Channel Power MOSFET |
| IRFD310 | N-Channel Power MOSFET |
| IRFD320 | N-Channel Power MOSFET |
| IRFD9110 | P-Channel Power MOSFET |
| IRFD9120 | P-Channel Power MOSFET |
| IRFD9220 | P-Channel Power MOSFET |
| IRF120 | Power MOSFET |
| IRF121 | N-Channel Power MOSFET |