12N60
Key Features
- 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
- Low gate charge ( typical 52nC)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: 12N60
- Description: 600V N-Channel MOSFET
- Category: MOSFET
- Manufacturer: GFD
- Size: 858.45 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 12N60H | CHONGQING PINGYANG | N-CHANNEL MOSFET |
| 12N60F | CHONGQING PINGYANG | N-CHANNEL MOSFET |
| 12N60CD1 | IXYS | IGBT |
| 12N60 | Unisonic Technologies | N-CHANNEL MOSFET |
| 12N60C3D | Fairchild Semiconductor | HGTG12N60C3D |
| 12N60M2 | STMicroelectronics | N-channel Power MOSFET |
| 12N60AF | Nell Power Semiconductor | N-Channel Power MOSFET |
| 12N60A | Nell Power Semiconductor | N-Channel Power MOSFET |
| 12N60 | CHONGQING PINGYANG | N-CHANNEL MOSFET |
| 12N60C | IXYS | IGBT |