12N60 Description
This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology....
12N60 Key Features
- 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
- Low gate charge ( typical 52nC)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability