Datasheet4U Logo Datasheet4U.com

1SS388 - Schottky Barrier Diode

Key Features

  • Low forward voltage.
  • Low reverse current.
  • Small package.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
1SS388 Silicon Diode Toshiba Semiconductor
1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE SEMTECH
1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Pan Jit International
1SS388 High Speed Switching Diode LGE
1SS388 Switching Diode MCC

Other Datasheets by Galaxy Microelectronics

Part Number Description
1SS380 Silicon Epitaxial Planar Diode
1SS389 Schottky Barrier Diode
1SS344 Surface mount schottky diode
1SS352 Silicon Epitaxial Planar Diode
1SS355 Silicon Epitaxial Planar Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Production specification Schottky Barrier Diode FEATURES  Low forward voltage.  Low reverse current.  Small package. APPLICATIONS  High-speed switching application. Pb Lead-free ORDERING INFORMATION Type No.