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2SA1740 - PNP Epitaxial Planar Silicon Transistor

Features

  • High breakdown voltage.
  • Adoption of MBIT process.
  • Excellent hFE linearlity. Pb Lead-free.

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Full PDF Text Transcription

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PNP Epitaxial Planar Silicon Transistor FEATURES  High breakdown voltage.  Adoption of MBIT process.  Excellent hFE linearlity. Pb Lead-free APPLICATIONS  High-Voltage Driver Applications Production specification 2SA1740 ORDERING INFORMATION Type No. Marking 2SA1740 AK SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICP Collector Current(Pulse) PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.8t) Value Units -400 V -400 V -5 V -200 mA -400 mA 0.5 W 1.3 Note1 W -55 to +150 ℃ E042 Rev.A www.gmesemi.
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