2SB1260 Key Features
- High breakdown voltage and high current. BVCEO=-80V,IC=-1A
- Good hFEVLinearity
- Low VCE(sat)
- plements the 2SD1898
- RoHS pliant with Halogen-free
- Part: 2SB1260
- Manufacturer: Galaxy Microelectronics
- Size: 364.92 KB
Other 2SB1260 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
ROHM |
2SB1260 | Power Transistor |
WILLAS |
2SB1260 | Plastic-Encapsulate Transistors |
Kexin Semiconductor |
2SB1260 | PNP Transistors |
JCET |
2SB1260 | PNP Transistor |
SeCoS Halbleitertechnologie GmbH |
2SB1260 | PNP Plastic Encapsulated Transistor |
2SB1260 Description
Power Transistor(-80V,-1A).