2SB1261 Datasheet (PNP Epitaxial Planar Silicon Transistors)

Part: 2SB1261
Manufacturer: Galaxy Microelectronics
Size: 370.04 KB

2SB1261 Key Features

Epitaxial planar die construction
High hFE
Low VCE(sat)
Case: TO-252
Molding pound: UL flammability classification rating 94V-0
Terminals: Tin-plated; solderability per MIL-STD-202, Method 208
55 ~ +150 -55 ~ +150
DC Current Gain
VCE = -2V, IC = -2A
Collector-emitter Saturation Voltage

Other 2SB1261 Datasheets

Manufacturer	Part Number	Description
LGE	2SB1261	PNP Transistor
JCET	2SB1261	PNP Transistor
JILIN SINO	2SB1261	PNP Epitaxial Silicon Transistor
Micro Commercial Components	2SB1261	PNP Silicon Epitaxial Transistors
Inchange Semiconductor	2SB1261-K	Silicon NPN Power Transistor

View all 2SB1261 datasheets →

2SB1261 Description

Features Epitaxial planar die construction High hFE Low VCE(sat) PNP Silicon Epitaxial Planar Transistor 2SB1261 Mechanic al Data Case: UL flammability classification rating 94V-0 Terminals: March 2023 [2.0] .gmesemi.