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2SB834 Datasheet, GME

2SB834 transistor equivalent, pnp epitaxial silicon transistor.

2SB834 Avg. rating / M : 1.0 rating-14

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2SB834 Datasheet

Features and benefits

z Low Collector-Emitter Saturation Voltage. VCE(sat)=1V(Max)@IC=3A,IB=0.3A. z DC Current Gain HFE=60-200@IC=0.5A. z Complememtary to PNP 2SD880. Pb Lead-free Production.

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2SB834 Page 1 2SB834 Page 2 2SB834 Page 3

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