Full PDF Text Transcription for 2SD1898 (Reference)
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2SD1898. For precise diagrams, and layout, please refer to the original PDF.
Production specification Power Transistor(80V,1A) FEATURES High VCEO,VCEO=80V. High IC,IC=1A(DC). Good HFE Linearity. Low VCE(sat). Complement the 2SB1260. Pb L...
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. Good HFE Linearity. Low VCE(sat). Complement the 2SB1260. Pb Lead-free 2SD1898 APPLICATIONS NPN silicon transistor. ORDERING INFORMATION Type No. Marking 2SD1898 DF SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 1A IC Collector Current -pulse PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.8t) 2 0.5 1.3 Note1 -55 to +150 A W W ℃ E087 Rev.A www.gmesemi.
2SD1898 Datasheet
