BL1N60 Description
Production specification N-Channel Enhancement Mode Field Effect Transistor.
BL1N60 Key Features
- RDS(ON) =9.3Ω@VGS = 10V
- Ultra Low gate charge (typical 5.0nC)
- Low reverse transfer capacitance (CRSS = typical 3.0 pF)
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness