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Production specification
N-Channel Enhancement Mode Power Mosfet
FEATURES
Advanced trench process technology Lower on-resistance Reliable and Rugged Electrostatic Sensitive Devices.
Pb
Lead-free
BL2312
APPLICATIONS
Power Management in Notebook. Portable Equipment. Battery Powered System.
SOT-23
ORDERING INFORMATION
Type No.
Marking
BL2312
2312
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
Drain-Source voltage
20
VGSS ID IDM PD RθJA
TJ, Tstg
Gate -Source voltage
Maximum Drain current
Pulsed Drain current
Power Dissipation Thermal resistance,Junction-to-Ambient (PCB mounted) Operating Junction and Storage Temperature Range
±8 4.9 15 0.75 140
-55~+150
Units V V A A W ℃/W
℃
C319 Rev.A
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