BL2312 Datasheet | Galaxy Microelectronics

FEATURES - Advanced trench process technology - Lower on-resistance - Reliable and Rugged - Electrostatic Sensitive Devices. Pb Lead-free APPLICATIONS - Power Management in Notebook. - Portable Equipment. - Battery Powered System. SOT-23 ORDERING INFORMATION Type No. Marking Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage VGSS ID IDM PD RθJA TJ, Tstg Gate -Source voltage Maximum Drain current Pulsed Drain current Power Dissipation Thermal resistance,Junction-to-Ambient (PCB mounted) Operating Junction and Storage Temperature Range ±8 4.9 15 0.75 140 -55~+150 Units V V A A W ℃/W ℃ C319 Rev.A .gmesemi. Production specification N-Channel Enhancement Mode Power Mosfet ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Drain-Source Breakdown...