BL2301 Datasheet | Galaxy Microelectronics

s Production specification P-Channel Enhancement Mode Field Effect Transistor BL2301 Features z RDS(ON)≤110mΩ@VGS=-4.5V. Pb z RDS(ON)≤150mΩ@VGS=-2.5V. Lead-free z Super high density cell design for extremely low RDS(ON). APPLICATIONS z Power Management in Note book. z Portable Equipment. z Battery Powered System. z Load Switch. z DSC. ORDERING INFORMATION SOT-23 Type No. BL2301 Marking A1T Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -20 VGSS ID IDM PD RθJA Gate -Source voltage Maximum Drain current TA=25℃ TA=70℃ Pulsed Drain current Power Dissipation TA=25℃ TA=70℃ Thermal...