Galaxy Century Microelectronics BL2301
P-Channel Enhancement Mode Field Effect Transistor
| Part No. | BL2301 |
|---|---|
| Datasheet | BL2301 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | P-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
z RDS(ON)≤110mΩ@VGS=-4.5V. Pb z RDS(ON)≤150mΩ@VGS=-2.5V. Lead-free z Super high density cell design for extremely low RDS(ON).APPLICATIONS
z Power Management in Note book. z Portable Equipment. z Battery Powered System. z Load Switch. z DSC. ORDERING INFORMATION SOT-23 Type No. BL2301 Marking A1T Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage -20 VGSS ID IDM PD RθJA Gate -Source voltage Maximum Drain current TA=25℃ TA=70℃ Pulsed Drain current Power Dissipation TA=25℃ TA=70℃ Thermal resistance,Junction-to-Ambient ±8 -2.0 -1.6 -10 0.7 0.45 175 TJ,Tstg Operating Junction and StorageTemperature 175 Units V V A A W ℃/W ℃ C229 Rev.A 1 s Production specification P-Channel Enhancement Mode Field Effect Transistor BL2301ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current Symbol V(BR)DSS VG...
