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BL2301W - P-Channel Enhancement MOSFET

Key Features

  • RDS(ON)≤150mΩ@ VGS=-4.5V.
  • RDS(ON)≤200mΩ@ VGS=-2.5V.
  • High-speed switching.
  • Drive circuits can be simple.
  • Parallel use is easy. P-Channel Enhancement MOSFET BL2301W Typical.

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Full PDF Text Transcription for BL2301W (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BL2301W. For precise diagrams, tables, and layout, please refer to the original PDF.

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Features  RDS(ON)≤150mΩ@ VGS=-4.5V.  RDS(ON)≤200mΩ@ VGS=-2.5V.  High-speed switching.  Drive circuits can be simple.  Parallel use is easy. P-Channel Enhancement MOSFET BL2301W Typical Applications  Power management in note book.  Switching application.  Battery powered system  Load switch Mechanical Data  Case: SOT-323.  Molding Compound, UL Flammability Classification Rating 94V-0.  Terminals: Matte Tin Plated Leads, Solderable Per MIL-STD-202, Method 208. SOT-323 Ordering Information Part Number BL2301W Package SOT-323 Shipping 3000 pcs / Tape & Reel Marking Code 2301 Maximum Ratings (@TA=25℃ unless otherwise specified) Parameter Symbol Value Drain-Source Voltage VDSS -20 Gate -Source Voltage Continuous Drain Current VGSS ±12 TA =25℃ ID -1.