BL2302 - N-Channel Enhancement Mode Field Effect Transistor

Galaxy Microelectronics

Key Features

z 20V/3.6A,RDS(ON)=85m_@VGS=4.5V. Pb z 20V/3.1A,RDS(ON)=115m_@VGS=2.5V. Lead-free z Super high density cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability.

BL2302 n-channel enhancement mode field effect transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	BL2302
Manufacturer	Galaxy Microelectronics
File Size	211.80 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	BL2302 Datasheet

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Production specification N-Channel Enhancement Mode Field Effect Transistor BL2302 FEATURES z 20V/3.6A,RDS(ON)=85m_@VGS=4.5V. Pb z 20V/3.1A,RDS(ON)=115m_@VGS=2.5V. Lead-free z Super high density cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability. APPLICATIONS z Power Management in Notebook. z Portable Equipment. z DC/DC Converter. ORDERING INFORMATION SOT-23 Type No. BL2302 Marking A2T Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 20 VGSS ID IDM Gate -Source voltage Maximum Drain current TA=25℃ TA=70℃ Pulsed Drain current ±8 2.8 2.2 10 PD Power Dissipation 1.