BL2302 Datasheet | Galaxy Microelectronics

Production specification N-Channel Enhancement Mode Field Effect Transistor BL2302 Features z 20V/3.6A,RDS(ON)=85m_@VGS=4.5V. Pb z 20V/3.1A,RDS(ON)=115m_@VGS=2.5V. Lead-free z Super high density cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability. APPLICATIONS z Power Management in Notebook. z Portable Equipment. z DC/DC Converter. ORDERING INFORMATION SOT-23 Type No. BL2302 Marking A2T Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage VGSS ID IDM Gate -Source voltage Maximum Drain current TA=25℃ TA=70℃ Pulsed Drain current ±8 2.8 2.2 PD...