Datasheet4U Logo Datasheet4U.com

BL2303 - P-Channel Power Mosfet

Key Features

  • Electrostatic Sensitive Devices.
  • VDS (V) = -30V.
  • ID = -2.7A(VGS =-10V).
  • RDS(ON) < 190mΩ (VGS = -10V) RDS(ON) < 330mΩ (VGS = -4.5V) Pb Lead-free.

📥 Download Datasheet

More Datasheets from Galaxy Microelectronics

Part Number Description
BL2300 N-Channel Power Mosfet
BL2301 P-Channel Enhancement Mode Field Effect Transistor
BL2301W P-Channel Enhancement MOSFET
BL2302 N-Channel Enhancement Mode Field Effect Transistor
BL2304 N-Channel Power Mosfet
BL2305 P-Channel Power Mosfet
BL2306 N-Channel Power Mosfet
BL2308 N-Channel Power Mosfet
BL2311 P-Channel Power Mosfet
BL2312 N-Channel Power Mosfet

Full PDF Text Transcription for BL2303 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BL2303. For precise diagrams, tables, and layout, please refer to the original PDF.

View original datasheet text
Production specification P-Channel Enhancement Mode Field Effect Transistor BL2303 FEATURES  Electrostatic Sensitive Devices.  VDS (V) = -30V  ID = -2.7A(VGS =-10V)  RDS(ON) < 190mΩ (VGS = -10V) RDS(ON) < 330mΩ (VGS = -4.5V) Pb Lead-free APPLICATIONS  P-channel enhancement mode effect transistor.  Switching application. ORDERING INFORMATION Type No. Marking BL2303 2303 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS ID IDM PD RθJA Gate -Source voltage Continuous Drain Current @TC=25℃ @TC=70℃ Pulsed Drain Current Power Dissipation @TC=25℃ @TC=70℃ @TA=25℃ @TA=70℃ Thermal resistance,Junction-to-Ambient TJ, Tstg Junction and Storage Temperature Value -30 ±20 -2.7 -2.2 -10 2.3 1.5 1.0 0.