BL2303 Overview
Production specification P-Channel Enhancement Mode Field Effect Transistor BL2303.
BL2303 Key Features
- Electrostatic Sensitive Devices
- VDS (V) = -30V
- ID = -2.7A(VGS =-10V)
- RDS(ON) < 190mΩ (VGS = -10V)
Datasheet Details
| Part number | BL2303 |
|---|---|
| Datasheet | BL2303-GME.pdf |
| File Size | 390.40 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | P-Channel Power Mosfet |
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