BL2303 Description
Production specification P-Channel Enhancement Mode Field Effect Transistor BL2303.
BL2303 Key Features
- Electrostatic Sensitive Devices
- VDS (V) = -30V
- ID = -2.7A(VGS =-10V)
- RDS(ON) < 190mΩ (VGS = -10V)
- Part: BL2303
- Manufacturer: Galaxy Microelectronics
- Size: 390.40 KB
Related Galaxy Microelectronics Datasheets
| Part Number | Description |
|---|---|
| BL2300 | N-Channel Enhancement Mode MOSFET |
| BL2300-3L | N-Channel Enhancement Mode MOSFET |
| BL2301 | P-Channel Enhancement Mode Field Effect Transistor |
| BL2301W | P-Channel Enhancement MOSFET |
| BL2302 | N-Channel Enhancement Mode Field Effect Transistor |