BL2312DF1
BL2312DF1 is N-Channel Enhancement Mode MOSFET manufactured by Galaxy Microelectronics.
Features
- Super low gate charge
- Green device available
- Excellent cd V / dt effect decline
- Advanced high cell density trench technology
Mechanical Data
- Case: DFN2020-6L
- Molding pound: UL Flammability Classification Rating 94V-0
- Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,
Method 208
DFN2020-6L
Ordering Information
Part Number BL2312DF1
Package DFN2020-6L
Shipping Quantity 3000 pcs / Tape & Reel
Marking Code 2312
Maximum Ratings (@ TA = 25℃ unless otherwise specified)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Pulsed Drain Current
- 3
Symbol VDSS VGSS ID IDM
Value 20 ±8 9.5 38
Unit V V A A
Thermal Characteristics (@ TA = 25℃ unless otherwise specified)
Parameter Power Dissipation (TC = 25°C)
- 3 Thermal Resistance Junction-to-Air
- 1 Operating Junction Temperature Range Storage Temperature Range
Symbol PD RθJA TJ TSTG
Value 2.4 52
-55 ~ +150 -55 ~ +150
Unit W
°C/W °C °C
MTM0613A: December 2021
.gmesemi.
N-Channel Enhancement Mode MOSFET BL2312DF1
Electrical Characteristics (@ TA = 25℃ unless otherwise specified)
Symbol
Parameter
Test Condition
Min. Typ. Max....
