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BL2312DF1 Datasheet

Manufacturer: Galaxy Microelectronics
BL2312DF1 datasheet preview

Datasheet Details

Part number BL2312DF1
Datasheet BL2312DF1-GME.pdf
File Size 765.68 KB
Manufacturer Galaxy Microelectronics
Description N-Channel Enhancement Mode MOSFET
BL2312DF1 page 2 BL2312DF1 page 3

BL2312DF1 Overview

N-Channel Enhancement Mode MOSFET BL2312DF1.

BL2312DF1 Key Features

  • Super low gate charge
  • Green device available
  • Excellent cdV / dt effect decline
  • Advanced high cell density trench technology
  • Case: DFN2020-6L
  • Molding pound: UL Flammability Classification Rating 94V-0
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202
  • 55 ~ +150 -55 ~ +150
  • ±100 nA
  • td(ON) Turn-on Delay Time
Galaxy Microelectronics logo - Manufacturer

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