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BL2312 - N-Channel Power Mosfet

Key Features

  • Advanced trench process technology.
  • Lower on-resistance.
  • Reliable and Rugged.
  • Electrostatic Sensitive Devices. Pb Lead-free BL2312.

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Full PDF Text Transcription for BL2312 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BL2312. For precise diagrams, tables, and layout, please refer to the original PDF.

Production specification N-Channel Enhancement Mode Power Mosfet FEATURES  Advanced trench process ...

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technology  Lower on-resistance  Reliable and Rugged  Electrostatic Sensitive Devices. Pb Lead-free BL2312 APPLICATIONS  Power Management in Notebook.  Portable Equipment.  Battery Powered System. SOT-23 ORDERING INFORMATION Type No. Marking BL2312 2312 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-Source voltage 20 VGSS ID IDM PD RθJA TJ, Tstg Gate -Source voltage Maximum Drain current Pulsed Drain current Power Dissipation Thermal resistance,Junction-to-Ambient (PCB mounted) Operating Junction and Storage Temperature Range ±8 4.9 15 0.75 140 -55~+150 Units V V A A W ℃/W ℃ C319 Rev.A www.gmesemi.