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BL2311 - P-Channel Power Mosfet

Key Features

  • Super High Dense Cell Design for Extremely Pb Low RDS(ON) Lead-free.
  • Reliable and Rugged.
  • Electrostatic Sensitive Devices. BL2311.

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Full PDF Text Transcription for BL2311 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BL2311. For precise diagrams, tables, and layout, please refer to the original PDF.

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Production specification P-Channel Enhancement Mode Power Mosfet FEATURES  Super High Dense Cell Design for Extremely Pb Low RDS(ON) Lead-free  Reliable and Rugged  Electrostatic Sensitive Devices. BL2311 APPLICATIONS  Power Management in Notebook.  Portable Equipment.  Battery Powered System. SOT-23 ORDERING INFORMATION Type No. Marking BL2311 2311 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VDSS VGSS ID IDM PD RθJA TJ, Tstg Drain-Source voltage -20 Gate -Source voltage Maximum Drain current TA=25℃ TA=70℃ Pulsed Drain current ±8 -4.2 -3.4 -30 Power Dissipation 1.37 Thermal resistance,Junction-to-Ambient 90 Operating Junction and Storage Temperature Range -55~+150 Units V V A A W ℃/W ℃ C336 Rev.A www.