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BL2N65D Datasheet Preview

BL2N65D Datasheet

N-Channel Power Mosfet

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2 Amps, 600 Volts N-CHANNEL MOSFET
FEATURES
RDS(on)=3.8@VGS=10V.
Pb
Ultra Low gate charge (typical 9.0nC) Lead-free
Low reverse transfer capacitance (Crss = typical 5.0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL2N65I/2N65D
TO-251 TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDSS
ID
IDM
VGSS
Drain-Source voltage
Drain current continuous
Drain current Pulsed (Note2)
Gate -Source voltage
(TC=25)
650
2.0
8.0
±30
V
A
A
V
IAR Avalanche Current (Note2)
2.0 A
EAR
EAS
dv/dt
Avalanche Energy
Repetitive(Note 2) 4.5
Avalanche Energy
Single Pulse(Note 3) 140
Peak Diode Recovery dv/dt (Note4)
4.5
mJ
mJ
V/ns
PD Power Dissipation
(TC=25) 44
W
TJ Junction Temperature
+150
TSTG
Storage Temperature
-55 ~ +150
θJA
Thermal Resistance Junction-Ambient
50
/W
θJc Thermal Resistance Junction-Case 2.87 /W
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently
damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not
implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25°C
W097
Rev.A
www.gmesemi.com
1




GME

BL2N65D Datasheet Preview

BL2N65D Datasheet

N-Channel Power Mosfet

No Preview Available !

Production specification
2 Amps, 600 Volts N-CHANNEL MOSFET BL2N65I/2N65D
4. ISD2.4A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
ELECTRICAL CHARACTERISTICS@ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ΔBVDSS/
ΔTJ
VGS=0V,ID=250μA
ID=250UA,Referenced to 25°C
650
-
-
0.4
Zero Gate Voltage Drain Current
Gate-body Leakage
Forward
Reverse
Gate Threshold Voltage
Static drain-Source on-resistance
IDSS
IGSS
VGS(th)
RDS(ON)
VDS=600V, VGS=0V
VDS=480V,TC=125
VDS=0V, VGS=30V
VDS=0V, VGS=-30V
VDS=VGS, ID=250μA
VGS=10V,ID=1A,
--
--
--
--
2.0 -
- 3.8
Forward transconductance
gFS
VDS=50V,ID=1A (Note1)
- 2.25
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source
Diode Forward Current
Ciss
Coss
Crss
td(on)
tR
td(off)
tf
Qg
Qgs
Qgd
ISD
VDS=25V,VGS=0V,f=1.0MHz
VDD=300V,ID=2.4A,RG=25
(Note1,2)
VDS=480V,ID=2.4A,VGS=10V
(Note1,2)
-
-
-
-
-
-
-
-
-
-
-
270
40
5
10
25
20
25
9.0
1.6
4.3
-
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
--
Drain-Sourse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Notes:
VSD
trr
Qrr
VGS=0V,ISD=2.0A
VGS=0V,ISD=2.4A,
dIF/dt=100A/us (Note1)
--
- 180
- 0.72
1. Pulse Test: Pulse Width 300μs, Duty Cycle2%
2. Essentially Independent of Operating Temperature
MAX
-
-
10
100
100
-100
4.0
5
-
350
50
7
30
60
50
60
11
-
-
2.0
8.0
1.4
-
-
UNIT
V
V/
μA
nA
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
W097
Rev.A
www.gmesemi.com
2


Part Number BL2N65D
Description N-Channel Power Mosfet
Maker GME
Total Page 4 Pages
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