BL2N65D Datasheet | Galaxy Microelectronics

FEATURES - RDS(on)=3.8Ω@VGS=10V. Pb - Ultra Low gate charge (typical 9.0n C) Lead-free - Low reverse transfer capacitance (Crss = typical 5.0 p F) - Fast switching capability - Avalanche energy specified - Improved dv/dt capability, high ruggedness Production specification BL2N65I/2N65D TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDSS ID IDM VGSS Drain-Source voltage Drain current continuous Drain current Pulsed (Note2) Gate -Source voltage (TC=25℃) 650 2.0 8.0 ±30 IAR Avalanche Current (Note2) 2.0 A EAR EAS dv/dt Avalanche Energy Repetitive(Note 2) 4.5 Avalanche Energy Single Pulse(Note 3) 140 Peak Diode Recovery dv/dt (Note4) 4.5 m J m J V/ns PD Power Dissipation (TC=25℃) 44 TJ Junction Temperature +150 ℃ TSTG...