2 Amps, 600 Volts N-CHANNEL MOSFET
FEATURES
RDS(on)=3.8Ω@VGS=10V.
Pb
Ultra Low gate charge (typical 9.0nC) Lead-free
Low reverse transfer capacitance (Crss = typical 5.0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness
Production specification
BL2N65I/2N65D
TO-251 TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VDSS
ID
IDM
VGSS
Drain-Source voltage
Drain current continuous
Drain current Pulsed (Note2)
Gate -Source voltage
(TC=25℃)
650
2.0
8.0
±30
V
A
A
V
IAR Avalanche Current (Note2)
2.0 A
EAR
EAS
dv/dt
Avalanche Energy
Repetitive(Note 2) 4.5
Avalanche Energy
Single Pulse(Note 3) 140
Peak Diode Recovery dv/dt (Note4)
4.5
mJ
mJ
V/ns
PD Power Dissipation
(TC=25℃) 44
W
TJ Junction Temperature
+150
℃
TSTG
Storage Temperature
-55 ~ +150
℃
θJA
Thermal Resistance Junction-Ambient
50
℃/W
θJc Thermal Resistance Junction-Case 2.87 ℃/W
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently
damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not
implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
W097
Rev.A
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